| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor dynamics quantity sensor using a capacity detection method, which can be made easily. <P>SOLUTION: The sensor has a single crystal silicon substrate 1 on which a SiO<SB>2</SB>film 111, a BGSP film 123 and n<SP>+</SP>polysilicon 122 are arranged in order. A single crystal silicon substrate 101 is arranged on it via a SiO<SB>2</SB>film 120. A cantilever 102 having projections 103 to 105 at its end, fixed electrodes 133 to 138 which are disposed facing the projections, and an electric path which is separated from the cantilever, are formed in the single crystal silicon substrate 101. An under portion contact 121 which connects the electric path with the n<SP>+</SP>polysilicon 122, is formed on a SiO<SB>2</SB>film 120 directly under the electric path. A plurality of electrode extraction portions which are made of aluminum are arranged on a main surface of the single crystal silicon substrate 101, and one of them is connected to the electric path. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
