| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is driven with lower power supply voltage and moreover provides a higher gain, and also to provide a method for driving the same semiconductor device. SOLUTION: The semiconductor device includes: a pn-junction material forming a potential barrier with a first semiconductor region 11 and a second semiconductor region 10 respectively provided faced with each other in the joining surfaces 30a, 30b; a first electrode 22 connected to the first semiconductor region 11 in the vicinity of the joining surfaces via an insulator 12; a second electrode 21 connected to the first semiconductor region 11; and a third electrode 20 connected to the second semiconductor region. When a forward bias voltage is impressed between the second electrode 21 and the third electrode 20, the potential barrier is lowered corresponding to the joining surfaces. The potential barrier changes when a potential difference is given between the first electrode 22 and the second electrode 21. A first semiconductor region 11 is formed as a channel 31 allowing flow of a drive current from a region near the front surface on the front surface of the boundary to the insulator 13. As a result, the semiconductor device can be driven as a transistor. COPYRIGHT: (C)2009,JPO&INPIT
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