| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element which has high reliability by suppressing current leakages, by avoiding forming a sub-trench in an etching-back process for forming a sidewall insulating film as an inter-electrode insulating film, and then forming the inter-electrode insulating film which is readily made fine and which is high in quality. SOLUTION: The process of forming the sidewall insulating film as the inter-electrode insulating film for a solid-state imaging element, having a single-layer electrode structure includes a first etching process of anisotropically etching an insulating film, covering a substrate except for a part of it; and a second etching process of isotropically etching the insulating film left on the substrate; as well as, a process of heat-treating the insulating film, prior to at least the second etching process. COPYRIGHT: (C)2009,JPO&INPIT
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