| 摘要 |
PROBLEM TO BE SOLVED: To improve light emission characteristics of a nitride-based semiconductor light emitting device having a light emission wavelength of≥430 nm. SOLUTION: The nitride-based semiconductor light emitting device according to the present invention comprises one or more n-type nitride-based semiconductor layers stacked in order on a substrate, an active layer having a quantum well structure, and one or more p-type nitride-based semiconductor layers, and is characterized in that the active layer includes a well layer of InGaN and a barrier layer containing at least one of GaN and InGaN and has a light emission wavelength of 430 to 580 nm, the well layer has a small thickness of 1.2 to 4.0 nm, and the barrier layer is 10 to 45 times as thick as the well layer so as to operate as a buffer layer for strain of the well layer. COPYRIGHT: (C)2009,JPO&INPIT
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