| 摘要 |
This pattern forming method comprises: a step 1 in which a film is formed upon a substrate by using a actinic ray-sensitive or a radiation-sensitive resin composition containing at least a resin having a group that is decomposed by the action of an acid and generates a polar group; a step 2 in which said film is exposed; a step 3 in which the exposed film is developed and a pattern is formed; and a step 4 in which the pattern is plasma-treated. In step 3, either a developing solution including water is used, the film is developed, and then a developing solution including an organic solvent is used, the film is developed and a pattern is formed or, alternatively, a developing solution including an organic solvent is used, the film is developed and then a developing solution including water is used, the film is developed, and a pattern is formed. The weight-average molecular weight of the resin is at least 5,000. This electronic device production method includes said pattern forming method. |
