发明名称 Magnetic material, and memory and sensor using same
摘要 A magnetic material composed of epsilon-In<SUB>x</SUB>Fe<SUB>2-x</SUB>O<SUB>3 </SUB>(wherein 0<x<=0.30) crystal in which In is substituted for a portion of the Fe sites of the epsilon-Fe<SUB>2</SUB>O<SUB>3 </SUB>crystal. The crystal exhibits an X-ray diffraction pattern similar to that of an epsilon-Fe<SUB>2</SUB>O<SUB>3 </SUB>crystal structure and has the same space group as that of an epsilon-Fe<SUB>2</SUB>O<SUB>3</SUB>. The In content imparts to the magnetic material a magnetic phase transition temperature that is lower than that of the epsilon-Fe<SUB>2</SUB>O<SUB>3 </SUB>and a spin reorientation temperature that is higher than that of the epsilon-Fe<SUB>2</SUB>O<SUB>3</SUB>. The In content can also give the magnetic material a peak temperature of the imaginary part of the complex dielectric constant that is higher than that of the epsilon-Fe<SUB>2</SUB>O<SUB>3</SUB>.
申请公布号 US2007218319(A1) 申请公布日期 2007.09.20
申请号 US20060521395 申请日期 2006.09.15
申请人 OHKOSHI SHIN-ICHI;HASHIMOTO KAZUHITO;SAKURAI SHUNSUKE;KUROKI SHIRO 发明人 OHKOSHI SHIN-ICHI;HASHIMOTO KAZUHITO;SAKURAI SHUNSUKE;KUROKI SHIRO
分类号 G11B5/65;B32B15/00 主分类号 G11B5/65
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