发明名称 |
Magnetic material, and memory and sensor using same |
摘要 |
A magnetic material composed of epsilon-In<SUB>x</SUB>Fe<SUB>2-x</SUB>O<SUB>3 </SUB>(wherein 0<x<=0.30) crystal in which In is substituted for a portion of the Fe sites of the epsilon-Fe<SUB>2</SUB>O<SUB>3 </SUB>crystal. The crystal exhibits an X-ray diffraction pattern similar to that of an epsilon-Fe<SUB>2</SUB>O<SUB>3 </SUB>crystal structure and has the same space group as that of an epsilon-Fe<SUB>2</SUB>O<SUB>3</SUB>. The In content imparts to the magnetic material a magnetic phase transition temperature that is lower than that of the epsilon-Fe<SUB>2</SUB>O<SUB>3 </SUB>and a spin reorientation temperature that is higher than that of the epsilon-Fe<SUB>2</SUB>O<SUB>3</SUB>. The In content can also give the magnetic material a peak temperature of the imaginary part of the complex dielectric constant that is higher than that of the epsilon-Fe<SUB>2</SUB>O<SUB>3</SUB>.
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申请公布号 |
US2007218319(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20060521395 |
申请日期 |
2006.09.15 |
申请人 |
OHKOSHI SHIN-ICHI;HASHIMOTO KAZUHITO;SAKURAI SHUNSUKE;KUROKI SHIRO |
发明人 |
OHKOSHI SHIN-ICHI;HASHIMOTO KAZUHITO;SAKURAI SHUNSUKE;KUROKI SHIRO |
分类号 |
G11B5/65;B32B15/00 |
主分类号 |
G11B5/65 |
代理机构 |
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地址 |
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