| 摘要 |
A method for manufacturing a temperature measuring wafer of a furnace apparatus for manufacturing a semiconductor, a temperature measuring wafer, and a method for measuring the temperature are provided to reduce a defect by using a sheet resistance value. A Sb ion is implanted into a p type semiconductor substrate(10). An In ion is implanted into an n type semiconductor substrate. A buried layer(20) is formed by thermally processing the ion-implanted impurity. A heat process condition has a range of 900 to 1000 degrees centigrade in a nitrogen gas atmosphere. An epitaxial silicon layer(30) that is a silicon layer of the same dopant type as the semiconductor substrate is formed in the semiconductor substrate by performing an epitaxial process. The epitaxial silicon layer is formed to have the thickness of 3 to 4 um in a temperature of 1100 to 1200 degrees centigrade. A contact region(40) is formed by ion-implanting the impurity of the dopant type opposite to the semiconductor substrate in the upper part of the wafer.
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