| 摘要 |
The present invention addresses the problem of providing an organic element material which can be crosslinked without carrying out a treatment at high temperatures. A solution for the problem is an insulating layer material of an organic thin film transistor, which contains a polymer compound that has a repeating unit having a fluorine atom-containing group and a repeating unit having a photodimerization reactive group. Preferable examples of the fluorine atom-containing group include an aryl group wherein a hydrogen atom is substituted by a fluorine atom and an alkyl aryl group wherein a hydrogen atom is substituted by a fluorine atom. Particularly preferable examples of the fluorine atom-containing group are a phenyl group wherein a hydrogen atom is substituted by a fluorine atom and an alkyl phenyl group wherein a hydrogen atom is substituted by a fluorine atom. Preferable examples of the photodimerization reactive group include a vinyl group wherein a hydrogen atom at the 2-position is substituted by an aryl group and a vinyl group wherein a hydrogen atom at the 2-position is substituted by an arylcarbonyl group. |
