| 摘要 |
PROBLEM TO BE SOLVED: To inhibit formation of a damaged layer in a surface layer of an SiCOH film.SOLUTION: A semiconductor device manufacturing method comprises: forming a first film CVL on an interlayer insulation film INSL3 of an SiCOH film, in which the first film CVL is formed in an atmosphere not containing oxygen and contains Si and does not contain O, and has plasma resistance; subsequently forming a second film HDL to be a hard mask and forming a resist pattern RST and further forming a hard mask film HDM on the first film CVL; subsequently removing the resist pattern RST; subsequently etching the first film CVL and the interlayer insulation film INSL3 by using the hard mask film HDM as a mask to form a depression DEP; subsequently forming a conductive film MTL in the depression DEP and on the hard mask HDM; and subsequently removing the conductive film MTL, the hard mask film HDM and the first film CVL, at positions located on the hard mask film HDM. |
