发明名称 Monolithic visible-infrared focal plane array on silicon
摘要 A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.
申请公布号 US9472588(B1) 申请公布日期 2016.10.18
申请号 US201514744210 申请日期 2015.06.19
申请人 International Business Machines Corporation 发明人 Li Ning;Sadana Devendra K.;Wisnieff Robert L.
分类号 H01L31/00;H01L27/146;H01L31/105;H01L31/0304;H01L31/028 主分类号 H01L31/00
代理机构 Harrington & Smith 代理人 Harrington & Smith ;Percello Louis J.
主权项 1. A structure, comprising a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the silicon substrate; and a radiation detecting pixel disposed on a second portion of the top surface of the silicon substrate, the radiation detecting pixel being comprised of a plurality of radiation detectors connected with the silicon readout circuitry, where the plurality of radiation detectors are comprised of at least one visible wavelength radiation detector comprised of germanium and at least one infrared wavelength radiation detector comprised of a Group III-V semiconductor material; where the radiation detecting pixel comprises a layer of oxide disposed on the second portion of the surface of the silicon substrate and a layer of germanium disposed on the layer of oxide, where the plurality of radiation detectors are each comprised of a plurality of layers of semiconductor material disposed above the layer of germanium and one of vertically adjacent to one another in a stacked manner and laterally adjacent to one another.
地址 Armonk NY US