| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of being operated at high speed even when positive high voltage is applied to a gate electrode, and also to provide a method of manufacturing the same.SOLUTION: A compound semiconductor device includes: a substrate 101; a buffer layer 103 on the upper side of the substrate 101; a channel layer 104 on the upper side of the buffer layer 103; a barrier layer 107 on the upper side of the channel layer 104; and a gate electrode 123, a source electrode 121 and a drain electrode 122 on the upper side of the channel layer 104. A quantum well of the channel layer 104 on a first surface of the buffer layer 103 side is deeper than that on a second surface of the barrier layer 107 side.SELECTED DRAWING: Figure 3 |
