CIGSSe thin film for solar cell, preparation method thereof and its application to thin film solar cell

摘要

Provided is a CIGSSe thin film for a solar cell, a method for preparing the same, and a solar cell using the same. More particularly, the CIGSSe thin film for a solar cell shows a decrease in peak intensity of sulfur from the surface of the thin film to the local minimum value point of sulfur content in the depth direction, after the analysis based on the Auger electron spectroscopy, and thus controls the band-gap in the thin film. Therefore, the solar cell including the CIGSSe thin film shows an excellent effect in improving photoelectric conversion efficiency.

主权项

1. A method for preparing a CIGSSe thin film for a solar cell, comprising the steps of:
(A) heating a substrate coated with CIG (Cu—In—Ga) oxide under the atmosphere in which a gaseous sulfur precursor and gaseous selenium precursor are present; and (B) consuming the gaseous selenium precursor completely, and then further heating the substrate under the atmosphere of the gaseous sulfur precursor.