| 发明名称 |
PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS |
| 摘要 |
The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.; |
| 申请公布号 |
US2016348243(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201515114666 |
申请日期 |
2015.01.22 |
| 申请人 |
BASF SE |
发明人 |
XU Ke;SCHILDKNECHT Christian;SPIELMANN Jan;FRANK Juergen;BLASBERG Florian;LOEFFLER Daniel;GAERTNER Martin;WEIGUNY Sabine;SCHIERLE-ARNDT Kerstin;FEDERSEL Katharina;ABELS Falko |
| 分类号 |
C23C16/455;C07F15/06;C07F15/04;B01J13/00;C07F3/00 |
主分类号 |
C23C16/455 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1: A process, comprising:
bringing a compound of general formula (I) into a gaseous or aerosol stateand
depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other and represent a hydrogen atom, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4. |
| 地址 |
Ludwigshafen DE |
