| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for high temperature reflow sputtering technique capable of sufficiently filling a metallic material into a hole even in the case a substrate is heated at a lower temperature. SOLUTION: One of a plurality of treatment chambers airtightly connected to the circumference of a separation chamber 1 is a sputtering chamber 4, and two stage film deposition is performed. In the first stage, the distance between a target 42 and a substrate 9 is defined as the long first distance, so as to produce a base thin film 93 at the inside face of a hole 90, and, in the second stage, the distance between the target 42 and the substrate 9 is defined as the short second distance, and the substrate 9 is heated by a heater 441, thus the thin film is made to reflow, so as to be filled into the hole 90. The separation chamber 1 is provided with a panel 12 cooled to 130K to 50K by a refrigerator 13, and an impure gas is condensed on the surface of the panel 12. COPYRIGHT: (C)2007,JPO&INPIT
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