| 摘要 |
An electrical and/or optical component and a process for manufacturing the component achieve especially good quality in the component and especially reliably avoid crystal dislocations in material layers of the component. In the process for producing a component, at least one trench is etched into a substrate, the trench is overgrown laterally by at least one semiconductor layer in such a way that the trench is completely covered by the semiconductor layer while forming a gas-filled, especially air-filled, cavity, and the component is integrated in the semiconductor layer or in a further semiconductor layer applied to the semiconductor layer, with an active region of the component being placed above the cavity.
|
