发明名称 プラズマ処理装置及びプラズマ処理方法
摘要 The plasma processing apparatus is provided with a plasma source 13 which generates plasma inside a chamber 11, a stage 16 which is provided inside the chamber 11 and places a carrier 5 thereon, a cover 31 which is arranged above the stage 16 to cover a holding sheet 6 and a frame 7 and has a window 33 which is formed to penetrate the cover 31 in the thickness direction, and a drive mechanism 38 which changes the position of the cover 31 relative to the stage 16 between a first position and a second position. The second position does not allow the cover 31 to make contact with the holding sheet 6, the frame 7 and a substrate 2. The cover 31 includes at least a ceiling surface 36b which extends in parallel to the upper face of the frame 7 and an inclined surface 36c which is inclined to gradually come close to the upper face of the holding sheet 6 exposed at the inner diameter side of the frame 7.
申请公布号 JP5934939(B2) 申请公布日期 2016.06.15
申请号 JP20130099290 申请日期 2013.05.09
申请人 パナソニックIPマネジメント株式会社 发明人 西崎 展弘;針貝 篤史;岩井 哲博;廣島 満
分类号 H01L21/3065;H01L21/673;H01L21/677 主分类号 H01L21/3065
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