发明名称 |
METHOD FOR DEPOSITING A COPPER SEED LAYER ONTO A BARRIER LAYER AND COPPER PLATING BATH |
摘要 |
The present invention relates to a method for providing a copper seed layer on top of a barrier layer wherein said seed layer is deposited onto said barrier layer from an aqueous electroless copper plating bath comprising a water-soluble source for Cu(II) ions, a reducing agent for Cu(II) ions, at least one complexing agent for Cu(II) ions and at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof. The resulting copper seed layer has a homogeneous thickness distribution and a smooth outer surface which are both desired properties. |
申请公布号 |
US2016194760(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201414906370 |
申请日期 |
2014.09.11 |
申请人 |
ATOTECH DEUTSCHLAND GMBH |
发明人 |
DAMMASCH Matthias;HARYONO Marco;KARASAHIN Sengül;SCHREIER Hans-Jürgen |
分类号 |
C23C18/40;C25D5/00;C25D7/12;C23C18/16;C25D3/38 |
主分类号 |
C23C18/40 |
代理机构 |
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代理人 |
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主权项 |
1. A method for providing a copper seed layer on top of a barrier layer comprising, in this order, the steps of
(i) providing a substrate comprising at least on a portion of the outer surface a barrier layer, (ii) contacting said substrate with an aqueous electroless copper plating bath which comprises
a. a water-soluble source for Cu(II) ions,b. a reducing agent for Cu(II) ions,c. at least one complexing agent for Cu(II) ions andd. at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof. |
地址 |
Berlin DE |