发明名称 |
HIGH-FREQUENCY INTEGRATED DEVICE WITH AN ENHANCED INDUCTANCE AND A PROCESS THEREOF |
摘要 |
The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device. |
申请公布号 |
EP2915212(A4) |
申请公布日期 |
2016.07.20 |
申请号 |
EP20130852064 |
申请日期 |
2013.10.30 |
申请人 |
INDIAN INSTITUTE OF SCIENCE |
发明人 |
SAI, RANAJIT;SHIVSHANKAR, SRINIVASARAO AJJAMPUR;BHAT, NAVAKANTA;KALARICKAPARAMBIL JOSEPH, VINOY |
分类号 |
H01Q1/24;H01L21/02;H01L23/522;H01L23/64;H01L27/06;H01L49/02 |
主分类号 |
H01Q1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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