发明名称 Substrate processing device
摘要 A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11 , and a gas supply system 70 A, 70 B for supplying at least a plurality of reaction gases into the reaction vessel 11 , the gas supply system 70 A, 70 B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11 , and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
申请公布号 US2006124058(A1) 申请公布日期 2006.06.15
申请号 US20050529896 申请日期 2005.12.27
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SAKAI MASANORI;SHIMA NOBUHITO;OKUDA KAZUYUKI
分类号 C23C16/00;C23C16/44 主分类号 C23C16/00
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