发明名称 |
FORMATION OF BURIED COLOR FILTERS IN A BACK SIDE ILLUMINATED IMAGE SENSOR WITH AN ONO-LIKE STRUCTURE |
摘要 |
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures. |
申请公布号 |
US2016276400(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201615168816 |
申请日期 |
2016.05.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Cheng Yun-Wei;Chen Chiu-Jung;Chien Volume;Lee Kuo-Cheng;Hsu Yung-Lung;Chen Hsin-Chi |
分类号 |
H01L27/146;H01L21/311;H01L21/02 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a semiconductor image sensor device, comprising:
bonding a first side of a device substrate to a carrier substrate, the device substrate including a pixel region and a bonding pad region, wherein the pixel region contains a plurality of light-sensing pixels configured to sense radiation that enters the device substrate from a second side opposite the first side; thinning the device substrate from the second side; forming a plurality of light-reflective structures over the second side of the device substrate after the thinning, the light-reflective structures partially defining a plurality of openings; forming a first layer over each of the light-reflective structures; forming a second layer over the first layer, the first layer and the second layer having different material compositions; and filling the openings with a third layer, the third layer and the second layer having different material compositions. |
地址 |
Hsin-Chu TW |