发明名称 CRYSTAL PRODUCTION METHOD AND ITS APPARATUS
摘要 PROBLEM TO BE SOLVED: To simultaneously produce a plurality of single crystals in only one process by one crystal production apparatus. SOLUTION: In the crystal production apparatus, a seed crystal 34 is disposed in a crucible 31 held in a furnace, and a raw material 32 filled in the crucible 31 is heated to be melted. Crystal growth is carried out by slowly cooling the melted raw material from the lower portion of the crucible 31 toward its upper portion. In this case, one or a plurality of crucible holders 38 in which a plurality of crucibles 31 are installed are provided in the furnace to produce the plurality of crystals in one production process. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007099579(A) 申请公布日期 2007.04.19
申请号 JP20050294080 申请日期 2005.10.06
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;OXIDE CORP 发明人 SASAURA MASAHIRO;KODA HIROKI;FUJIURA KAZUO;FURUKAWA YASUNORI
分类号 C30B11/00 主分类号 C30B11/00
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