| 摘要 |
A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1 , such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11 . Next, gaseous iron compound G<SUB>Fe </SUB>from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1<SUB>HCl </SUB>from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas G<SUB>FeComp </SUB>of an iron-containing reaction product, such as iron chloride (FeCl<SUB>2</SUB>). In association with the generation, the iron-containing reaction product G<SUB>FeComp</SUB>, first substance gas G<SUB>N </SUB>containing elemental nitrogen from a nitrogen source 17 , and second substance gas G<SUB>Ga </SUB>containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.
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