发明名称 |
Bit symbol recognition method and structure for multiple bit storage in non-volatile memories |
摘要 |
Storage of information represented by a multi-bit word in a single non-volatile memory cell is made possible by programming the threshold voltage of the non-volatile memory to a specific threshold level corresponding to the multi-bit word. Stored or generated multi-bit words are scanned and converted into a gate voltage to be applied to the non-volatile memory cell until the electrical response from the non-volatile memory cell indicates that the voltage generated from the specific multi-bit word which has been applied to the gate matches the information stored in the non-volatile memory cell. The matched multi-bit word is read out of storage and represents the stored bits in the single non-volatile memory cell.
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申请公布号 |
US2007217258(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20060378074 |
申请日期 |
2006.03.16 |
申请人 |
FLASHSILICON INCORPORATION |
发明人 |
WANG LEE |
分类号 |
G11C16/06;G11C11/34;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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