GERMANIUM SULFIDE COMPOUNDS FOR SOLID ELECTROLYTIC MEMORY ELEMENTS

摘要

A method for making high purity GeS and related compounds at low temperatures and pressures in a Chemical Vapor Deposition (CVD) process for solid electrolyte memory elements and other applications. Disclosed is a method of generating a proper chemical and energy environment for the formation of GeS and related compounds on a specific surface. The produced films have great utility in memory and other devices. The invented technology offers great cost saving and advantage of low temperature film creation through the use of plasma assisted deposition - increasing its compatibility for use not only on silicon (or ceramic or glass) non metal substrates as well as polymer or thin metal foil substrates which would be damaged by higher temperature processes.