Silicide Region of Gate-All-Around Transistor

摘要

The disclosure relates to a semiconductor device and methods of forming same. A representative structure for a semiconductor device comprises a substrate; a nanowire structure protruding from the substrate having a channel region disposed between a source region and a drain region; a pair of silicide regions extending into opposite sides of the source region, wherein each of the pair of silicide regions comprise a vertical portion adjacent to the source region and a horizontal portion adjacent to the substrate; and a metal gate surrounding a portion the channel region.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a nanowire structure protruding from a major surface of a substrate; depositing a first dielectric layer over the nanowire structure and extending to the major surface; depositing a second dielectric layer over the first dielectric layer; removing a portion of the second dielectric layer over a top surface of the nanowire structure, whereby a remaining second dielectric layer remains adjacent to sidewall surfaces of the nanowire structure; removing a portion of the first dielectric layer over the top surface of the nanowire structure, whereby a remaining first dielectric layer remains on the sidewall surfaces of the nanowire structure; removing a portion of the remaining first dielectric layer below the remaining second dielectric layer to form a cavity; depositing a layer of metal on the major surface and extending into to the cavity; and annealing the substrate to form a silicide region extending into the substrate and a bottom portion of the nanowire structure.