ULTRATHIN ATOMIC LAYER DEPOSITION FILM ACCURACY THICKNESS CONTROL

摘要

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

主权项

1. A method for depositing a silicon oxide film by atomic layer deposition on a semiconductor substrate, the method comprising:
(a) inserting a substrate into a chamber; (b) after inserting the substrate into the chamber and prior to performing a first cycle of atomic layer deposition at a deposition temperature, raising the substrate's temperature to about the deposition temperature by exposing the substrate to a soak gas for a duration of about 500 seconds or less; and (c) performing the atomic layer deposition, wherein a cycle of the atomic layer deposition comprises exposing the substrate to a silicon-containing precursor in a non-plasma environment for a duration sufficient to substantially adsorb the silicon-containing precursor to the surface of the substrate and exposing the substrate to an oxidant in a plasma environment to form at least a portion of the silicon oxide film, wherein soaking the substrate comprises exposing the substrate to a soak gas comprising only one or more gases used when exposing the substrate to the oxidant in the plasma environment during the atomic layer deposition cycle to form the at least a portion of the silicon oxide film, and wherein the thickness of the silicon oxide film deposited by the atomic layer deposition is less than about 5 nm.