发明名称 HIGH CAPACITANCE SINGLE LAYER CAPACITOR AND MANUFACTURING METHOD THEREOF
摘要 A capacitor including a dielectric base, a metallization layer, and a very thin dielectric layer formed on one portion of the metallization layer, with an electrode formed on the dielectric layer. The method of the present invention allows for an array of capacitors to be formed so as to provide a very thin functional dielectric layer supported on a thicker dielectric substrate. The resulting capacitor has extremely high capacitance for its size.
申请公布号 US2016276103(A1) 申请公布日期 2016.09.22
申请号 US201415037953 申请日期 2014.11.20
申请人 Knowles Cazenovia, Inc. 发明人 Sood Prem Kumar;Nadeau Cassandra;Cherry John T.;O'Neil Benton
分类号 H01G4/06;H01G13/04 主分类号 H01G4/06
代理机构 代理人
主权项 1. A capacitor comprising: a dielectric base having three pairs of opposed side surfaces; a metallization layer of uniform thickness formed contiguously on two of the three pairs of opposed side surfaces; a dielectric layer formed on a portion of the metallization layer, wherein the portion of the metallization layer covers one side surface of the two pairs of opposed side surfaces; and an electrode formed on the dielectric layer.
地址 Cazenovia NY US