METHOD FOR WRITING TO A MAGNETIC TUNNEL JUNCTION DEVICE

摘要

A method of applying a write current to a magnetic tunnel junction device minimizes sub-threshold leakage. NMOS- and PMOS-follower circuits are used in applying the write current, and bias signals for the follower circuits are isolated from global bias signals before the write current is applied.

主权项

1. A magnetic random access memory, comprising:
a bit cell that includes:
a magnetic tunnel junction device;a select transistor coupled to the magnetic tunnel junction device, wherein a first end of the magnetic tunnel junction device is coupled to a first electrode of the select transistor; a first MOS-follower transistor coupled to a first end of the bit cell, the first MOS-follower transistor configured to apply a first voltage to the first end of the bit cell; a word line coupled to a control electrode of the select transistor of the bit cell; and a word line driver coupled to the word line, the word line driver configured to drive the word line to a high voltage to apply the high voltage at the control electrode of the select transistor.