Nonvolatile Memory Devices and Storage Devices Including Nonvolatile Memory Devices

摘要

The inventive concepts relate to nonvolatile memory devices. The nonvolatile memory devices may include a memory cell array, and a page buffer circuit connected to the memory cell array through bit lines. The page buffer circuit may comprise a substrate, bit line selection transistors on the substrate and connected to respective ones of the bit lines, and latches on the substrate connected to the bit line selection transistors through lines. The lines may be on a first plane above and parallel to a top surface of the substrate, and may be connected to respective ones of the bit line selection transistors through first contacts. The bit lines may be on a second plane above and parallel to a top surface of the substrate, and may be connected to respective ones of the bit line selection transistors through second contacts.

主权项

1. A nonvolatile memory device comprising:
a memory cell array; and a page buffer circuit connected to the memory cell array through bit lines, wherein the page buffer circuit comprises: a substrate; bit line selection transistors on the substrate and connected to respective ones of the bit lines; and latches on the substrate and connected to the bit line selection transistors through lines, wherein the lines are on a first plane above and parallel to a top surface of the substrate, and are connected to respective ones of the bit line selection transistors through first contacts, and wherein the bit lines are on a second plane above and parallel to a top surface the substrate, and are connected to respective ones of the bit line selection transistors through second contacts.