发明名称 |
LIGHT RECEIVING/EMITTING ELEMENT AND SENSOR DEVICE USING SAME |
摘要 |
A light receiving/emitting element includes a semiconductor substrate having one conductivity type; a light emitting element—including a plurality of semiconductor layers disposed on an upper surface of the semiconductor substrate; a light receiving element having a reverse conductivity type semiconductor region in the upper surface of the semiconductor substrate; and a first electrode pad disposed on the upper surface of the semiconductor substrate, the first electrode pad being as an electrode of the light receiving element. A region located immediately below the first electrode pad in the semiconductor substrate having one conductivity type is higher in impurity concentration than other regions in the semiconductor substrate having one conductivity type. |
申请公布号 |
US2016284921(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201415033599 |
申请日期 |
2014.10.30 |
申请人 |
KYOCERA CORPORATION |
发明人 |
FUJIMOTO Naoki |
分类号 |
H01L31/173;G01S7/481;H01L31/0352;G03G15/00;H01L31/0224;H01L31/0232 |
主分类号 |
H01L31/173 |
代理机构 |
|
代理人 |
|
主权项 |
1. A light receiving/emitting element comprising:
a semiconductor substrate having one conductivity type; a light emitting element comprising a plurality of semiconductor layers disposed on an upper surface of the semiconductor substrate; a light receiving element having a reverse conductivity type semiconductor region in the upper surface of the semiconductor substrate; and a first electrode pad disposed on the upper surface of the semiconductor substrate, the first electrode pad being as an electrode of the light receiving element, a region located immediately below the first electrode pad in the semiconductor substrate having one conductivity type being higher in impurity concentration than other regions in the semiconductor substrate having one conductivity type. |
地址 |
Kyoto-shi, Kyoto JP |