EPITAXIAL CHANNEL WITH A COUNTER-HALO IMPLANT TO IMPROVE ANALOG GAIN

摘要

The present disclosure relate to an integrated chip having long-channel and short-channel transistors having channel regions with different doping profiles. In some embodiments, the integrated chip includes a first gate electrode arranged over a first channel region having first length, and a second gate electrode arranged over a second channel region having a second length greater than the first length. The first channel region and the second channel region have a dopant profile, respectively along the first length and the second length, which has a dopant concentration that is higher by edges than in a middle of the first channel region and the second channel region. The dopant concentration is also higher by the edges of the first channel region than by the edges of the second channel region.

主权项

1. An integrated chip, comprising:
a first gate electrode arranged over a first channel region having a first length; a second gate electrode arranged over a second channel region having a second length greater than the first length; wherein the first channel region and the second channel region have dopant profiles, respectively along the first length and the second length, which have a dopant concentration that is higher by edges than in a middle of the first channel region and the second channel region; and wherein the dopant concentration is higher by the edges of the first channel region than by the edges of the second channel region.