发明名称 HIGH DENSTIY CAPACITORS FORMED FROM THIN VERTICAL SEMICONDUCTOR STRUCTURES SUCH AS FINFETS
摘要 A vertical structure may be manufactured in a substrate of an integrated circuit, and that vertical structure used to form a high density capacitance for the integrated circuit. These thin vertical structures can be configured to operate as an insulator in a capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufacturing technology, such as FinFET (fin field effect transistor) technology and manufacturing processes. The capacitors based on thin vertical structures may be integrated with other circuitry that can utilize the thin vertical structures, such as FinFET transistors.
申请公布号 WO2016182782(A1) 申请公布日期 2016.11.17
申请号 WO2016US30468 申请日期 2016.05.02
申请人 CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.;SHI, Zhonghai;TARABBIA, Marc, L. 发明人 SHI, Zhonghai;TARABBIA, Marc, L.
分类号 H01L29/66;H01L23/48;H01L29/775 主分类号 H01L29/66
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