| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit deterioration in characteristics caused by a damage layer and deterioration in characteristics caused by a position gap of P-type polycrystalline silicon by performing a process of removing or recovering the damage layers formed on lateral faces and bottom faces of grooves.SOLUTION: A semiconductor device manufacturing method comprises: forming grooves 3 at predetermined parts n a principal surface of a first conductivity type drift region 2 formed on a semiconductor substrate 1; depositing a hetero semiconductor 8 on the principal surface of the drift region 2 and on the drift region 2 in the grooves 3; introducing a second conductivity type impurity 9 into the hetero semiconductor 8 on the sidewall part; removing a part of the hetero semiconductor 8 on the principal surface of the drift region 2; and introducing a first conductivity type impurity 10 into the hetero semiconductor 8 on the principal surface of the drift region 2. |
