| 发明名称 | Gate boosting transmission gate | ||
| 摘要 | A gate-boosting transmission gate includes an input node and an output node. An n-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold. A p-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold. | ||
| 申请公布号 | US9484904(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514703720 | 申请日期 | 2015.05.04 |
| 申请人 | MICROSEMI SOC CORPORATION | 发明人 | McCollum John L. |
| 分类号 | H03K17/687;H03K17/0412;H01L27/092 | 主分类号 | H03K17/687 |
| 代理机构 | Leech Tishman Fuscaldo & Lampl | 代理人 | D'Alessandro Kenneth;Leech Tishman Fuscaldo & Lampl |
| 主权项 | 1. A gate-boosting transmission gate comprising: an input node; an output node; an n-channel transistor having a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold; and a p-channel transistor having a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold. | ||
| 地址 | San Jose CA US | ||