| 发明名称 | Doherty power amplifying circuit and power amplifier | ||
| 摘要 | A Doherty power amplifying circuit includes at least two asymmetrical two-branch power devices. Each of the asymmetrical two-branch power devices includes two power amplifiers. In the at least two asymmetrical two-branch power devices, one power amplifier included in each asymmetrical two-branch power device separately forms a peak power amplifier of the Doherty power amplifying circuit, and the other power amplifiers included in all the asymmetrical two-branch power devices jointly form a main power amplifier of the Doherty power amplifying circuit. | ||
| 申请公布号 | US9484866(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514859080 | 申请日期 | 2015.09.18 |
| 申请人 | HUAWEI TECHNOLOGIES CO., LTD. | 发明人 | Sun Jie;Zeng Zhixiong;Li Xuekun |
| 分类号 | H03F3/68;H03F1/02;H03F1/56;H03F3/195;H03F3/24;H03F3/19;H03F3/21 | 主分类号 | H03F3/68 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A Doherty power amplifying circuit, wherein the Doherty power amplifying circuit comprises at least two asymmetrical two-branch power devices, and each of the at least two asymmetrical two-branch power devices comprises two power amplifiers; and in the at least two asymmetrical two-branch power devices, one power amplifier comprised in each asymmetrical two-branch power device separately forms a peak power amplifier of the Doherty power amplifying circuit, and the other power amplifiers comprised in all the asymmetrical two-branch power devices jointly form a main power amplifier of the Doherty power amplifying circuit; wherein in the at least two asymmetrical two-branch power devices, a gate bias voltage of each of the one power amplifiers that separately form a peak power amplifier is lower than a gate bias voltage of each of the other power amplifiers that jointly form the main amplifier of the Doherty power amplifying circuit. | ||
| 地址 | Shenzhen CN | ||