| 摘要 |
<p>PURPOSE: A manufacturing method of a floating gate layer for a semiconductor device is provided to improve a leakage current characteristic and cycling nature of a turner insulating layer by improving the electric thickness of the turner insulating layer. CONSTITUTION: A manufacturing method of a floating gate layer for a semiconductor device is comprised of the steps: preparing a semiconductor substrate(101) in which a turner insulating layer(103) is formed; forming a first silicon film(105a) containing a first dopant(107a) on the turner insulating layer; Forming the second silicon film(105b) containing a second dopant(107b) with higher concentration than the first dopant on the first silicon; and making the first silicon films and the second silicon films crystallization.</p> |
