STACK-LAYERED NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME AND MEMORY CARD AND SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A stack-layered nonvolatile memory device, a method of manufacturing the same and a memory card and a system including the same are provided to form the top parts of a common source line and/or a bit line contact plug in a lower portion than the top part of a gate structure, thereby improving device reliability by preventing defects of a contact. CONSTITUTION: A stack-layered nonvolatile memory device includes a lower memory layer, lower contact units, an upper memory layer, and upper contact units. The lower memory layer(1) includes a lower active area and a plurality of lower gate structures. The upper contact units are electrically connected to the active area. Partial top parts of the upper contact units are formed in a lower portion than the top part of the upper gate structures.