发明名称 ANODE BATTERY MATERIALS AND METHODS OF MAKING THE SAME
摘要 In some embodiments, the present invention provides methods of preparing porous silicon films and particles by: (1) etching a silicon material by exposure of the silicon material to a constant current density in a solution (e.g., hydrofluoric acid solution) to produce a porous silicon film over a substrate; and (2) separating the porous silicon film from the substrate by gradually increasing the electric current density in sequential increments. The methods of the present invention may also include a step of associating the porous silicon film with a binding material, such as polyacrylonitrile (PAN). The methods of the present invention may also include a step of splitting the porous silicon film to form porous silicon particles. Additional embodiments of the present invention pertain to methods of preparing porous silicon particles and anode materials that may be derived from the porous silicon films and porous silicon particles of the present invention.
申请公布号 US2016344016(A1) 申请公布日期 2016.11.24
申请号 US201615098600 申请日期 2016.04.14
申请人 Biswal Sibani Lisa;Thakur Madhuri;Wong Michael S.;Sinsabaugh Steven L.;Isaacson Mark 发明人 Biswal Sibani Lisa;Thakur Madhuri;Wong Michael S.;Sinsabaugh Steven L.;Isaacson Mark
分类号 H01M4/1395;H01M4/04;C25F5/00;H01M4/38;H01M4/62;C25F3/12;H01M10/0525;H01M4/134 主分类号 H01M4/1395
代理机构 代理人
主权项 1. A method of preparing a porous silicon film, wherein the method comprises: etching a silicon material, wherein the etching comprises exposure of the silicon material to an electric current density, andwherein the etching produces a porous silicon film over a silicon substrate; and separating the porous silicon film from the silicon substrate, wherein the separating comprises a gradual increase of the electric current density in sequential increments.
地址 Houston TX US