发明名称 BIAS CIRCUITRY FOR DEPLETION MODE AMPLIFIERS
摘要 A circuit (10) having an amplifier (11), comprising: a depletion mode transistor (Q1) having a source electrode coupled to a reference potential; a drain electrode coupled to a potential (VDD) more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit (10) includes a bias circuit (12), comprising: a current source; and biasing circuitry coupled to the current source and between the potential (VDD) more positive than the reference potential and a potential (-VSS) more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.
申请公布号 WO2016205049(A1) 申请公布日期 2016.12.22
申请号 WO2016US36546 申请日期 2016.06.09
申请人 RAYTHEON COMPANY 发明人 BETTENCOURT, John, P.;BIELUNIS, Alan, J.;RODRIGUEZ, Istvan;WANG, Zhaoyang, C.
分类号 H03F1/30;H03F3/19;H03F3/193;H03F3/195;H03F3/72 主分类号 H03F1/30
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