发明名称 |
BIAS CIRCUITRY FOR DEPLETION MODE AMPLIFIERS |
摘要 |
A circuit (10) having an amplifier (11), comprising: a depletion mode transistor (Q1) having a source electrode coupled to a reference potential; a drain electrode coupled to a potential (VDD) more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit (10) includes a bias circuit (12), comprising: a current source; and biasing circuitry coupled to the current source and between the potential (VDD) more positive than the reference potential and a potential (-VSS) more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry. |
申请公布号 |
WO2016205049(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
WO2016US36546 |
申请日期 |
2016.06.09 |
申请人 |
RAYTHEON COMPANY |
发明人 |
BETTENCOURT, John, P.;BIELUNIS, Alan, J.;RODRIGUEZ, Istvan;WANG, Zhaoyang, C. |
分类号 |
H03F1/30;H03F3/19;H03F3/193;H03F3/195;H03F3/72 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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