| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is capable of improving the semiconductor device in reliability. <P>SOLUTION: The method of manufacturing a semiconductor device comprises processes of forming a conductive part 30 inside each recess provided on the first surface 20 of a semiconductor substrate 10 equipped with integrated circuits 12, partially removing the second surface 21 of the semiconductor substrate 10 to make the substrate 10 thin so as to enable the conductive parts 30 to penetrate through the substrate 10 from its first surface 20 to second surface 21, and cutting out the semiconductor substrate 10 into a plurality of pieces. The electrical properties of the semiconductor substrate are checked through the intermediary of the conductive parts in one of processes which are carried out after a conductive part forming process. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
