| 摘要 |
To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S 1 ), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S 2 ), performing a first step of plasma processing using oxygen (O<SUB>2</SUB>) and carbon tetrafluoride (CF<SUB>4</SUB>) to remove a carbon-based deposit pile (S 3 ), and performing a second step of plasma processing using boron trichloride (BCl<SUB>3</SUB>) and chlorine (Cl<SUB>2</SUB>) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S 4 ).
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