| 摘要 |
There is provided a positive resist composition which enables the formation of a fine resist pattern, enables the angle of the taper shape within that resist pattern to be controlled to a suitable angle, and enables the formation of a resist pattern with an excellent depth width of focus. This positive resist composition is formed from a chemically amplified positive resist composition in which the light transmittance of a resist film of thickness 0.3 mum, relative to light of wavelength 248 nm, is within a range from 20 to 75%.
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