发明名称 METHOD FOR MINIMIZING CROSS SENSITIVITY IN FET-BASED GAS SENSORS
摘要 <p>A gas sensor based on a field effect transistor (&ldquo;FET&rdquo;) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.</p>
申请公布号 EP1738161(A1) 申请公布日期 2007.01.03
申请号 EP20050743344 申请日期 2005.04.22
申请人 MICRONAS GMBH 发明人 FLEISCHER, MAXIMILLIAN;LAMPE, UWE;MEIXNER, HANS;POHLE, ROLAND;SIMON, ELFRIEDE
分类号 G01N27/414;G01N27/22;G01N33/00 主分类号 G01N27/414
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