发明名称 METHOD AND APPARATUS FOR FORMING DEPOSITED FILM
摘要 A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.
申请公布号 US2008216748(A1) 申请公布日期 2008.09.11
申请号 US20080123920 申请日期 2008.05.20
申请人 CANON KABUSHIKI KAISHA 发明人 YASUNO ATSUSHI
分类号 C23C16/44;C23C16/52;C23C16/24;C23C16/509;C23C16/54;H01L21/00;H01L21/20;H01L21/205;H01L31/04 主分类号 C23C16/44
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