发明名称 SPUTTERING TARGET AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a divided sputtering target in which a constituent material of a base material exposed from a gap (divisional section) between target members can effectively prevent a constituent material of a backing plate form mixing into a thin film to be formed.SOLUTION: In a divided sputtering target, In or In alloy is mainly interposed on a concave portion of a convexoconcave area of a surface of a base material in an area corresponding to a divisional section formed by arranging target portions with a predetermined gap therebetween; when the surface of the area of the base material corresponding to the divisional section is analyzed by means of EPMA, an area of the In or In alloy has an area ratio of 40-80% of an observed area; the predetermined gap is 0.2-0.4 mm; and a backing plate contains Ti or Cu.SELECTED DRAWING: Figure 2B
申请公布号 JP2016156053(A) 申请公布日期 2016.09.01
申请号 JP20150034299 申请日期 2015.02.24
申请人 JX NIPPON MINING & METALS CORP 发明人 TATENO SATOSHI
分类号 C23C14/34 主分类号 C23C14/34
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