OPTOELECTRONIC PIXEL SENSOR

摘要

The present invention provides an electrical circuit element, defined as "optoelectronic pixel", comprising at least one silicon nanowire decorated with optoelectronically active particles and open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high- frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. In addition, the present invention provides an optoelectronic sensor and wearable-patch sensor based on the array of the optoelectronic pixels, and the readout methods for these sensors.