SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

Provided is a semiconductor device including a substrate, an insulating layer, a conductive layer and at least one spacer. The substrate has at least two shallow trenches therein. The conductive layer is disposed on the substrate between the shallow trenches. The insulating layer is disposed between the substrate and the conductive layer. The at least one spacer is disposed on one sidewall of the conductive layer and fills up each shallow trench. A method of forming a semiconductor device is further provided.

主权项

1. A semiconductor device, comprising:
a substrate, having at least two shallow trenches therein; a conductive layer, disposed on the substrate between the shallow trenches; an insulating layer, disposed between the substrate and the conductive layer; and at least one spacer, disposed on a sidewall of the conductive layer and filling up each shallow trench.