| 摘要 |
What is presented is a method for producing an optoelectronic semiconductor component, having the following steps: – providing a semiconductor layer sequence (1) having a light-emitting and/or light-absorbing active zone (12) and a cover surface (1a) arranged after the active zone (12) in a stacking direction (z) running perpendicular to a main plane of extent of the semiconductor layer sequence (1), – depositing a layer stack (2) on the cover surface (1a), wherein the layer stack (2) comprises an indium-containing oxide layer (20) and an intermediate surface (2a) arranged after the cover surface (2a) in the stacking direction (z), – depositing a contact layer (3), which is formed with indium tin oxide, on the intermediate surface (2a), wherein – the layer stack (2) is free from tin within the scope of production tolerances. |
