| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching technology for forming a constituent body of a MEMS device by dry-etching a sacrificial film. SOLUTION: An MEMS base material W is constituted via a step of forming the sacrificial film of a silicon substrate, a step of patterning the sacrificial film, a step of laminating a film forming the constituent body of the MEMS device on the patterned sacrificial film, and a step of patterning the film forming the constituent body of the MEMS device. The base material is held at the predetermined temperature in a range of the ordinary temperature to 300°C in an etching processing chamber 1, and dry-etches the sacrificial film by being exposed to HF vapor in a state of being held under predetermined reduced pressure in a range of 1 Kpa to 15 Kpa. Thus, etching can be performed under an uncondensing condition, and the sacrificial film can be etched without causing a sticking phenomenon generated in a wet etching method. COPYRIGHT: (C)2005,JPO&NCIPI
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