发明名称 Plasma doping method and plasma doping apparatus for performing the same
摘要 In a method of doping ions into an object, such as a substrate, using plasma, a doping gas may be provided between first and second electrodes in a chamber. An electric field may be formed between the first and the second electrodes to excite the doping gas to a plasma state. The electric field may be formed by applying a first power having a first positive electric potential and a second power having a second positive electric potential, the second positive electric potential being higher than the first positive electric potential. The electric field may be reversed in direction by blocking the second power from being applied to the second electrode. Accumulated ions on the substrate may be effectively neutralized by introducing electrons toward the substrate so that arcing generation may be prevented.
申请公布号 US2007087584(A1) 申请公布日期 2007.04.19
申请号 US20060542639 申请日期 2006.10.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KEUM GYEONG-SU;HUR JI-HYUN;WON JAI-HYUNG;HUH NO-HYUN;OH JAE-JOON
分类号 H01L21/31;H01L21/469;H01L29/76;H01L29/94;H01L31/00 主分类号 H01L21/31
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